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Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

Published online by Cambridge University Press:  15 February 2011

Yasutaka Uchida  and
Masakiyo Matsumura
Yasutaka Uchida
Affiliation:
Department of Electronics and Information Sciences, Nishi–Tokyo University, Uenohara–machi, Kitatsuru–gun, Yamanashi 409–01, JAPAN.
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Oh–okayama, Meguro–ku, Tokyo 152, JAPAN.
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Abstract

XPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 105
Copyright
Copyright © Materials Research Society 1994

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