Published online by Cambridge University Press: 15 March 2011
A novel method of making nanoscale devices in silicon dioxide on a silicon wafer has been developed in our laboratory. The method is both inexpensive and can be fully integrated with existing VLSI type electronic processing technology. The devices are defined using conventional micronscale photolithography and then reduced in scale during the processing sequence to form nanoscale structures. Further, since the structures are defined using lithography, they can be made to span the range of scales from macro to nano in one processing step. Finally, we have found that by using laser assisted chemical etches, we can “release” these very fine structures without the damage associated with wet processes such as stiction.