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Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells

Published online by Cambridge University Press:  07 July 2011

Jan Keller ,
Martin Knipper ,
Jürgen Parisi ,
Ingo Riedel ,
Thomas Dalibor  and
Alejandro Avellan
Jan Keller
Affiliation:
Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Martin Knipper
Affiliation:
Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Jürgen Parisi
Affiliation:
Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Ingo Riedel
Affiliation:
Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Thomas Dalibor
Affiliation:
AVANCIS GmbH & Co. KG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Alejandro Avellan
Affiliation:
AVANCIS GmbH & Co. KG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
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Abstract

We studied the thickness variation of equally doped ZnO:Al films used as conductive window layer in Cu(In,Ga)(Se,S)2 (CIGSSe) thin film solar cells. The IV-characteristics of solar cells with window layer thickness of d1=200nm exhibit a strong enhancement of the short-circuit current density JSC (ΔJSC = 3mA/cm2) as compared to samples with module-like ZnO:Al-film thickness (d2=1200nm). Accordingly, the quantum efficiency reveals the spectral regimes where the JSC-gain occurs. Moreover, current-voltage measurements reveal that the cells with thicker ZnO:Al exhibit slightly decreased open circuit voltage VOC. This finding can be assigned to a decreased net-doping density NA, which appears to be introduced by additional heat flux during the longer process time required for deposition of thicker ZnO:Al films. However, the improved efficiency of solar cells with thinner window layer comes along with an increase of the series resistance (RS) by almost a factor of 2, which will have consequences for the series connection of elements in a module. XRD-diffractograms and SEM cross-section imaging suggest that the enhanced RS in cells with thin ZnO:Al is not exclusively related to the thickness but is also due to a reduced (002)-texture and an elongated lateral charge carrier pathway.

Keywords

photovoltaictransparent conductoroptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d18-03
Copyright
Copyright © Materials Research Society 2011

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References

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