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Impact of Boron and Gallium on Defects Production in Silicon

Published online by Cambridge University Press:  17 March 2011

Aurangzeb Khan ,
Nethaji Dharmarasu ,
Masafumi Yamaguchi ,
Kenji Araki ,
Tuong K. Vu ,
Tatsuo Saga ,
Takao Abe ,
Osamu Annzawa ,
M. Imaizumi  and
Sumio Matsuda
Aurangzeb Khan
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Nethaji Dharmarasu
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Masafumi Yamaguchi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Kenji Araki
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Tuong K. Vu
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Tatsuo Saga
Affiliation:
Sharp Corporation, 282-1 Hajikami, Shinjo, Kitakatsuragi, Nara 639-2198, Japan
Takao Abe
Affiliation:
Shin-Etsu Handotai Co., Ltd, 2-13-1 Isoba, Annaka, Gunma 379-0196, Japan
Osamu Annzawa
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
M. Imaizumi
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
Sumio Matsuda
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Abstract

We report the results of comparison of radiation-induced defects (1 MeV electrons) in n+-p-p+ Si diodes doped with gallium or boron ranging in concentration from 8 × 1014 to 5 × 1016 cm−3, together with the impact of oxygen on radiation –induced defects. Present results provide evidence for new defects states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation-induced defects in Si. The interesting new future of our results is that the gallium appears to strongly suppress the radiation induced defect, especially hole level EV+0.36 eV, which is thought to act as a recombination center. Similarly the dominant electron level at EC-0.18 eV in B-doped Si (which act as a donor) has not been observed in Ga-doped CZ-grown Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.7/R9.7
Copyright
Copyright © Materials Research Society 2001

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References

[1] Glunz, S. W., Rein, S., Warta, W., Knobloch, J. and Wettling, W., Tech. Digest PVSEC–11, p. 549 (1999).Google Scholar
[2] Trombetta, J. M., Watkins, G. D.: Appl. Phys. Lett., 51, 1103 (1987).Google Scholar
[3] Mooney, P. M., Cheng, L. J., Sull, M., Gerson, J. D., Corbett, J. W., Phy. Rev. B 15, 3836 (1977).Google Scholar
[4] Watkins, G. D., Corbett, J. W.: Phys. Rev., 138, 543 (1965).Google Scholar
[5] Khan, A., Yamaguchi, M., Taylor, S. J., Hisamatsu, T., Matsuda, S., Jpn. J. Appl. Phys., 138, 2679 (1999).Google Scholar
[6] Khan, A., Yamaguchi, M., Saga, T., Abe, T., Annzawa, O. and Matsuda, S. J. Appl. Phys. 87, 8389 (2000).Google Scholar
[7] DeAngelis, Henry M., Drevinsky, Peter J., Appl. Phys. Lett. 42, 613 (1983).Google Scholar
[8] Yamaguchi, M., Khan, A., Taylor, S. J., Ando, K., Yamaguchi, T., Matsuda, S., Aburaya, T., J. Appl. Phys., 86, 217 (1999).Google Scholar
[9] Khan, A., Yamaguchi, M.et al. (to be published).Google Scholar