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Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics

Published online by Cambridge University Press:  21 February 2011

P.D. Maniar ,
R. Moazzami ,
R.E. Jones ,
A.C. Campbell  and
C.J. Mogab
P.D. Maniar
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
R. Moazzami
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
R.E. Jones
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
A.C. Campbell
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
C.J. Mogab
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
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Abstract

Integration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-operational for NVRAM applications. Post-crystallization processing of sol-gel deposited integrated ferroelectric PZT capacitors in the presence of hydrogen-containing, reducing ambients is observed to degrade the nonvolatile polarization. Low-pressure hydrogen anneals at temperatures as low as 200°C substantially degrade the nonvolatile polarization while the DRAM polarization remains roughly constant. Leakage current drops by one order of magnitude and fatigue is accelerated. A ferroelectric capacitor module can be integrated with minimal degradation with careful modifications in the backend processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

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References

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