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Imaging of III-V Compound Superlattices by Hrem and Rem

Published online by Cambridge University Press:  26 February 2011

B. C. De Cooman ,
J. R. Conner ,
S. R. Summerfelt ,
S. McKernan ,
C. B. Carter  and
J. R. Shealy
B. C. De Cooman
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
J. R. Conner
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
S. R. Summerfelt
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
S. McKernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
J. R. Shealy
Affiliation:
Electronics Laboratory, GE Corporation, Syracuse NY and School of Electrical Engineering, Cornell University, Ithaca NY 14853
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Abstract

Two techniques for the analysis of III-V compound superlattices are examined. It has been proposed that high-resolution TEM of [100]-oriented thin foils would give an improvement in layer contrast compared with [110]-oriented thin foils; it is shown here that the contrast of [100]-oriented superlattices is not necessarily better. Moreover, both high resolution and conventional dark-field imaging may be subject to significant diffraction contrast effects resulting from the bending of the reflecting planes near the surface of the sample. Reflection electron microscopy (REM) of cross-sectional (110) cleavage planes can also yield dark-field superlattice images and selected area RHEED patterns can in principle be used to determine reliably the superlattice strain as surface effects are minimized.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 187
Copyright
Copyright © Materials Research Society 1987

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References

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