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Imaging of Defects in Cadmium Telluride using High Resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

F. A. Ponce ,
T. Yamashita ,
R. H. Bube  and
R. Sinclair
F. A. Ponce
Affiliation:
Department of Materials Science and Engineering, Stanford UniversityStanford, CaliforniaUSA
T. Yamashita
Affiliation:
Department of Materials Science and Engineering, Stanford UniversityStanford, CaliforniaUSA
R. H. Bube
Affiliation:
Department of Materials Science and Engineering, Stanford UniversityStanford, CaliforniaUSA
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford UniversityStanford, CaliforniaUSA
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Abstract

The defect structure of cadmium telluride has been investigated using high resolution transmission electron microscopy. The variation of the TEM images with the defocus value is discussed, and defect symmetry considerations are used to correlate the image contrast characteristics with the lattice struc ture. Experimental micrographs of stacking faults and dislocations in the structure are analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 503
Copyright
Copyright © Materials Research Society 1981

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References

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