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Illumination- and Annealing-Induced Changes in the Infrared and Raman Spectra of a-Si:H

Published online by Cambridge University Press:  17 March 2011

L.-F. Arsenault ,
S. Lebiba ,
E. Sacher  and
A. Yelon
L.-F. Arsenault
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
E. Sacher
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
A. Yelon
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
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Abstract

We have investigated the changes, produced by light-soaking, in both the IR and Raman responses of the Si-Hn stretching peaks in the 2000-2100 cm−1 range. Our observations of the IR response are in qualitative agreement with those of Kong and co-workers [1]: that is, short-term light soaking produces an increase in the intensity of the signal and a simultaneous shift to lower frequency. In contrast, short-term light soaking decreases the total intensity of the Raman signal in the 2000-2100 cm−1 range, when normalized to the TO phonon peak at about 480 cm−1. In both cases, these modifications are reversed on annealing at 200° C. We suggest that these changes are attributable to alterations in the environments of the Si-Hn bonds, with the resultant transfer of intensity between IR and Raman matrix elements. Details of the evolution of the components of the Raman spectrum in the 2000-2100 cm−1 range are presented, and compared with IR changes in the same range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.3
Copyright
Copyright © Materials Research Society 2001

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References

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