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II-VI Semiconductor Heterostructures: Pointers to Appropriate Analysis Techniques

Published online by Cambridge University Press:  25 February 2011

Erica G. Bithell
Erica G. Bithell*
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK
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Abstract

Approximate methods are used, for a variety of II–VI semiconductor alloys, to estimate the sensitivity to composition change of quantitative transmission electron microscopy techniques which have proved successful in characterising III–V heterostructures. It is shown that bright field thickness fringe matching at the [001] axis is likely to prove relatively more successful than 200 dark field intensity measurement for many alloy systems. It is also noted that alternative methods would be necessary if quantitative characterisation of (Mn,Zn) compounds were required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 433
Copyright
Copyright © Materials Research Society 1991

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References

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