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II–VI / III–V Heterostructures

Published online by Cambridge University Press:  26 February 2011

L. A. Kolodziejski ,
R. L. Gunshor ,
N. Otsuka  and
A. V. Nurmikko
L. A. Kolodziejski
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
Materials Engineering, Purdue University, West Lafayette, IN 47907
A. V. Nurmikko
Affiliation:
Division of Engineering and Department of Physics, Brown University, Providence, RI 02912
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Abstract

The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe;. a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ∼0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 113
Copyright
Copyright © Materials Research Society 1988

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References

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