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Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Channel Mosfets

Published online by Cambridge University Press:  10 February 2011

C. A. Billman ,
P. M. Lenahan  and
W. Weber
C. A. Billman
Affiliation:
The Pennsylvania State University, University Park, PA 16802
P. M. Lenahan
Affiliation:
The Pennsylvania State University, University Park, PA 16802
W. Weber
Affiliation:
Siemens Corporate Research and Development, ZTME2 D-81739 Munich Germany
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Abstract

We show, for the first time, that E'like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 181
Copyright
Copyright © Materials Research Society 1997

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References

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