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Identification of Surface-Related Electron Traps in Undoped GaAs by Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  25 February 2011

Ki-Chul Shin  and
In-Shik Park
Ki-Chul Shin
Affiliation:
GoldStar Cable Research Lab., 555 Hogye, Anyang, Kyungki, Korea, 430-080
In-Shik Park
Affiliation:
GoldStar Cable Research Lab., 555 Hogye, Anyang, Kyungki, Korea, 430-080
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Abstract

Using undoped GaAs containing grain boundary, we performed annealing test to identify the processes occurring during heat treatment. We propose EL2 as a complex of double vacancy, AsGa and Asi. From the concentration change at grain boundary region we temporarily conclude that EL3 is a simple intrinsic defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 211
Copyright
Copyright © Materials Research Society 1990

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References

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