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Identification of Impurities and Defects in Semiconductors by Optical Spectroscopy
Published online by Cambridge University Press: 28 February 2011
Abstract
A review is given of the information that can be obtained on defect centers in semiconductors by optical spectroscopy. Particular emphasis is given to donor and acceptor identification, and symmetry determination of transition metal and axial defect-complex centers. The information that can be obtained from isotope doping effects is discussed.
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- Copyright © Materials Research Society 1985