Hostname: page-component-6bf8c574d5-mcfzb Total loading time: 0 Render date: 2025-03-08T08:21:22.226Z Has data issue: false hasContentIssue false
  • English
  • Français

Ic Compatible Processing of Si:Er for optoelectronics

Published online by Cambridge University Press:  21 February 2011

F. Y. G. Ren ,
J. Michel ,
Q. Sun-Paduano ,
B. Zheng ,
H. Kitagawa ,
D.C. Jacobson ,
J.M. Poate  and
L. C. Kimerling
F. Y. G. Ren
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
J. Michel
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
Q. Sun-Paduano
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
B. Zheng
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
H. Kitagawa
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
Get access

Abstract

We have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3 Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of δHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 87
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phys. Lett. 43, 943 (1983).Google Scholar
[2] Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.-H., Poate, J.M. and Kimerling, L.C., J. Appl. Phys. 70, 2672 (1991).Google Scholar
[3] Knapp, J.A. and Picraux, S.T., Appl. Phys. Lett. 48, 466 (1986).Google Scholar
[4] Murarka, S.P., Silicides for VLSI Applications, (Academic Press, Orlando, 1983), p. 142.Google Scholar
[5] Xie, Y.-H., Fitzgerald, E.A. and Mii, Y.-J., J. Appl. Phys. 70, 3223 (1991).Google Scholar
[6] Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Xie, Y.-H. and Kimerling, L.C., Appl. Phys. Lett. 58, 2797 (1991).Google Scholar
[7] Hirth, J.P. and Pound, G.M., Progress in Materials Science 11 (Macmillan, New York, 1963) p. 15.Google Scholar
[8] Freeland, P.E., Jackson, K. A., Lowe, C.W., and Patel, J.R., Appl. Phys. Lett. 30, 31 (1977).Google Scholar
[9] Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981) p. 69.Google Scholar
[10] Trumbore, F.A., Bell Syst. Tech. J. 39, 205 (1960).Google Scholar
[11] Yassievich, I.N. and Kimerling, L.C., Semicond. Sci. Technol. 7, 1 (1993).Google Scholar
[12] Lannoo, M. and Delerue, C., (MRS Proceedings) this volume.Google Scholar
[13] Klein, P.B. and Pomrenke, G.S., Electron. Letters 24, 1503 (1988).Google Scholar