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Hysteresis Phenomenon in Sequential Lateral Solidification poly-Si Thin Film Transistor at low temperature (213K)

Published online by Cambridge University Press:  01 February 2011

Sung-Hwan Choi ,
Sang-Geun Park ,
Won-Kyu Lee ,
Tae-Jun Ha  and
Min-Koo Han
Sung-Hwan Choi
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering and Computer Science, 599 Gwanak-ro, Gwanak-gu, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Sang-Geun Park
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Won-Kyu Lee
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Tae-Jun Ha
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Min-Koo Han
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
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Abstract

We have investigated temperature dependence on the hysteresis phenomenon of SLS poly-Si TFT on a glass substrate, extremely at low temperature (213K). The p-type sequential lataral solidification (SLS) polycrystalline Silicon (poly-Si) TFT was fabricated on glass substrate. As the temperature was reduced, it was observed that hysteresis phenomenon was increased, whereas the hysteresis was suppressed at high temperature. This could be explained by a difference of initially electron and hole trapped charges into gate insulator is much larger in low temperature than in high temperature. And we have verified that drain current was changed with a different previous gate starting voltage even at same bias condition by experimental results due to the hysteresis phenomenon of SLS poly-Si TFT. Hysteresis of SLS poly-Si TFT should be improved for a pixel element of high quality AMOLED display.

Keywords

thin filmSidevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A16-04
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Stewart, M., Polysilicon TFT Technology for Active Matrix OLED Display. IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845–851 (2001).Google Scholar
2. Kim, B.K., Kim, O.H., Chung, H.J., Chang, J.W., and Ha, Y.M., Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Display. Japanese Journal of Applied Physics, vol.43, no.4A, pp. L482–L485 (2004).Google Scholar
3. Sze, S.M. and NG, Kwok. K., Physics of Semiconductor Devices (3rd Edition),. (Wiley-Interscience, 2007).Google Scholar
4. Michalas, L., Papaioannou, G. J., Kouvatsos, D. N., and Voutsas, A. T., Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs. J. Electrochem. Soc., Volume 155, Issue 1, pp. H1–H5 (2008).Google Scholar
5. Han, K.M. and Sah, C.T., Positive oxide charge from hot hole injection during channel-hot-electron stress. IEEE Trans. on Electron Devices, Vol. 45, No. 7, pp. 1624–1627 (1998).Google Scholar
6. Luan, S. and Neudeck, G.W., Effect of NH3 plasma treatment of gate nitride on the performance of amorphous silicon thin-film transistors. J. Appl. Phys. 68 (7), 1 Oct. (1990).Google Scholar