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Hyperthermal H Atom Reactions on D/Si(100)

Published online by Cambridge University Press:  21 February 2011

Steven A. Buntin
Steven A. Buntin*
Affiliation:
National institute of Standards and Technology Gaithersburg, MD 20899
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Abstract

A photolytic source of H atoms is used to probe abstraction and adsorption reactions on the D/Si(100) monodeuteride surface. Surface H and D coverages are determined for H atom exposures, with incident average kinetic energies of 1.0 and 2.8 eV. the D atom depletion probability per incident H atom is 0.3±0.2 for both kinetic energies, and is likely due to abstraction. these results, together with previous studies, indicate that the rates of depletion of surface D and the uptake of H are nominally independent of H atom kinetic energy over the range of about 0.3 to nearly 3 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 227
Copyright
Copyright © Materials Research Society 1995

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References

1 Golub, M.A. and Wydeven, T., Polymer Degrad. and Stab. 22, 325 (1988).Google Scholar
2 Miyauchi, E., Crit. Rev. Sol. State. Matl. Sci. 17, 107 (1991).Google Scholar
3 Imai, S., lizuka, T., Sugiura, O. and Matsumura, M., Thin Solid Films 225, 168 (1993); S.M. Bedair, J. Vac. Sci. Technol. B 12, 179 (1994).Google Scholar
4 Yates, J.T. Jr., Cheng, C.C., Gao, Q., Colaianni, M.L. and Choyke, WJ., Thin Solid Films 225, 150 (1993) and References therein.Google Scholar
5 Koleske, D.D. and Gates, S.M., J. Chem. Phys. 99, 8218 (1993).Google Scholar
6 Koleske, D.D., Gates, S.M. and Schultz, J.A., J. Chem. Phys. 99, 5619 (1993); D.D. Koleske, S.M. Gates and B. Jackson, 101, 3301 (1994)..Google Scholar
7 Sinniah, K., Sherman, M.G., Lewis, L.B., Weinberg, W.H., Yates, J.T. Jr., and Janda, K.C., J. Chem. Phys. 92, 5700 (1990).Google Scholar
8 Wise, M.L., Koehler, B.G., Gupta, P., Coon, P.A. and George, S.M., Surf. Sci. 258, 166 (1991); C.C. Cheng and J.T. Yates, Jr., Phys. Rev. B 43, 4041 (1991).Google Scholar
9 Gentry, W.R. and Giese, C.F., Rev. Sci. INstrum. 49, 595 (1978).Google Scholar
10 G.van, N.A. Veen, Mohamed, K.A., Baller, T. and de Vries, A.E., Chem. Phys. 80, 113 (1983).Google Scholar
11 Buntin, S.A. (to be submitted).Google Scholar
12 Kolasinski, K.W., hit. J. Mod. Phys. B (in press) and References therein.Google Scholar
13 Dobbs, K.D. and DJ. Doren, J. amer. Chem. Soc. 115, 3731 (1993).Google Scholar
14 Dobbs, K.D. and Dixon, D.A., J. Phys. Chem. 98, 5290 (1994).Google Scholar