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Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

D. Pastor ,
R. Cuscó ,
L. Artus ,
F. Naranjo  and
E. Calleja
D. Pastor
Affiliation:
Institut Jaume Almera (CSIC), C. Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain.
R. Cuscó
Affiliation:
Institut Jaume Almera (CSIC), C. Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain.
L. Artus
Affiliation:
Institut Jaume Almera (CSIC), C. Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain.
F. Naranjo
Affiliation:
ISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica, Ciudad Universitaria, 28040 Madrid, Spain.
E. Calleja
Affiliation:
ISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica, Ciudad Universitaria, 28040 Madrid, Spain.
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Abstract

We report a Raman scattering study of local vibrational modes (LVMs) on Mg-doped GaN grown by molecular beam epitaxy (MBE). Besides Mg:Ga local vibrational modes clearly observed at 262 and 565 cm−1, several peaks were detected in the spectral regions around 2200 cm−1 and 2900 cm−1. The modes in the 2200 cm−1 spectral region correspond to local modes of hydrogen complexes and hydrogen-decorated defects, and indicate the presence of a fairly high concentration of H in the samples. The peaks observed in the 2900 cm−1 region are assigned to carbon-hydrogen local modes and are indicative of the presence of C impurities in the samples. These measurements show that both C and H impurities may be present in sizable amounts not only in metal-organic chemical vapor deposition (MOCVD) samples but also in MBE grown samples, and this may have an effect on the electrical conductivity ofp-type GaN:Mg samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.15
Copyright
Copyright © Materials Research Society 2004

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References

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