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Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering

Published online by Cambridge University Press:  01 February 2011

Rinaldo Trotta ,
Antonio Polimeni ,
Marco Felici ,
Giorgio Pettinari ,
Mario Capizzi ,
Andrea Frova ,
Giancarlo Salviati ,
Laura Lazzarini ,
Nicola Armani  and
Luigi Mariucci
...Show all authors
Rinaldo Trotta
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma 00185, Italy
Antonio Polimeni
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Marco Felici
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Giorgio Pettinari
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Mario Capizzi
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Andrea Frova
Affiliation:
[email protected], Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Giancarlo Salviati
Affiliation:
[email protected], IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Laura Lazzarini
Affiliation:
[email protected], IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Nicola Armani
Affiliation:
[email protected], IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Luigi Mariucci
Affiliation:
[email protected], IFN-CNR, Via Cineto Romano 42, Roma, 00156, Italy
Giorgio Bais
Affiliation:
[email protected], TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
Faustino Martelli
Affiliation:
[email protected], TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
Silvia Rubini
Affiliation:
[email protected], TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
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Abstract

The capability of hydrogen to passivate nitrogen in dilute nitrides is exploited to in-plane engineer the electronic properties of Ga(AsN)/GaAs heterostructures. Two methods are presented: i) by deposition of hydrogen-opaque metallic masks on Ga(AsN) and subsequent hydrogen irradiation, we artificially create zones of the crystal having the band gap of untreated Ga(AsN) surrounded by GaAs-like barriers; ii) by employing an intense (∼100 nA) and narrow (∼100 nm) beam of electrons, we dissociate the complexes formed by N and H in a spatially delimited part of a hydrogenated Ga(AsN) sample. As a consequence, in the spatial regions irradiated by the electron beam, hydrogenated Ga(AsN) recovers the smaller energy gap it had before hydrogen implantation.

Keywords

III-Vhydrogenationoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F02-08
Copyright
Copyright © Materials Research Society 2007

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