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Hydrogenation of Undoped and Nitrogen Doped Cdte and ZnSe Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

L. S. Hirsch ,
S. D. Setzler ,
A. J. Ptak ,
N. C. Giles  and
T. H. Myers
L. S. Hirsch
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
S. D. Setzler
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
A. J. Ptak
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
N. C. Giles
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
T. H. Myers
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506, [email protected]
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Abstract

Hydrogen incorporation in both undoped and nitrogen-doped CdTe and ZnSe is investigated. Evidence for a strong nitrogen-hydrogen interaction is presented. Preliminary data indicate that the growth of CdTe and ZnSe under an atomic hydrogen flux results in a significant concentration of paramagnetic defects possibly accompanied by enhanced auto-doping from residual impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 263
Copyright
Copyright © Materials Research Society 1998

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References

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