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Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Takaaki Kamimura ,
Hidetoshi Nozaki ,
Naoshi Sakuma ,
Mitsuo Nakajima  and
Hiroshi Ito
Takaaki Kamimura
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Hidetoshi Nozaki
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Naoshi Sakuma
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Mitsuo Nakajima
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Hiroshi Ito
Affiliation:
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane using a low-pressure mercury lamp. The deposition rate showed an activation type for substrate temperature (the activation energy: 0.13 eV), because the deposition rate would be determined by the rate of hydrogen elimination from the hydrogen saturated surface. Moreover, the relationship was found between the Si-H2 bond density in a- Si:H films and the gas phase reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 51
Copyright
Copyright © Materials Research Society 1989

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References

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