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Hydrogenated Amorphous Silicon Films by the Pyrolysis of Disilane(1)

Published online by Cambridge University Press:  28 February 2011

T. L. Chu ,
Shirley S. Chu ,
S. T. Ang ,
D. H. Lo ,
A. Duong ,
C. G. Hwaung  and
L. Book
T. L. Chu
Affiliation:
Southern Methodist University, Dallas, TX 75275
Shirley S. Chu
Affiliation:
Southern Methodist University, Dallas, TX 75275
S. T. Ang
Affiliation:
Southern Methodist University, Dallas, TX 75275
D. H. Lo
Affiliation:
Southern Methodist University, Dallas, TX 75275
A. Duong
Affiliation:
Poly Solar Incorporated, Garland, TX 75041
C. G. Hwaung
Affiliation:
Poly Solar Incorporated, Garland, TX 75041
L. Book
Affiliation:
Southern Methodist University, Dallas, TX 75275
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Abstract

The thermal decomposition of disilane in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous silicon (a-Si:H) films on the surface of several substrates at 450°-500°C. The concentration of disilane in the reaction mixture has been found to affect strongly the deposition rate and the photoconductivity of a-Si:H films. The AMI conductivity of a-Si:H films increases with increasing disilane concentration and approaches lO−5(ohm-cm)−l at disilane concentrations higher than about 4%, and the conductivity ratio is about lO5. The density of gap states in CVD a-Si:H films have been determined by the photothermal deflection spectroscopy, capacitancetemperature, capacitance-frequency, and space-charged-limited current measurements with similar results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 21
Copyright
Copyright © Materials Research Society 1985

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