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Hydrogen Passivation Studies in Dislocated CZ and FZ Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Hydrogen passivation using a Kaufmann ion source at 400°C has been carried out on FZ and CZ silicon dislocated by four-point bending at high temperatures. The results differ from those reported for dislocations passivated in silicon sheet grown by the EFG technique. A model for hydrogen diffusion and trapping is presented to argue that the differences observed are not produced by hydrogen transport effects in the bulk.
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- Copyright © Materials Research Society 1990
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