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Hydrogen Passivation of Oxygen Donors in Si

Published online by Cambridge University Press:  28 February 2011

S. J. Pearton ,
A. M. Chantre ,
L. C. Kimerling ,
K. D. Cummings  and
W. C. Dautremont-Smith
S. J. Pearton
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. M. Chantre
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. D. Cummings
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
W. C. Dautremont-Smith
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The electrical activity of the oxygen-related thermal donors in heat-treated, P-doped, Czochralski grown Si is passivated by reaction with atomic hydrogen. Secondary ion mass spectrometry and spreading resistance profiles on deuterium plasma treated samples show a direct correlation between the deuterium incorporation depth and the distance over which the thermal donors are passivated. The donor activity is restored by annealing above 400°C, and comparison with other defect dehydrogenation data suggests that the thermal donors may contain Si dangling bonds. Results obtained from deep level transient spectroscopy measurements are used to illustrate the observed donor passivation and reactivation kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 475
Copyright
Copyright © Materials Research Society 1986

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References

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