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Hydrogen Passivation of Be-Acceptors in AiGaAs/GaAs Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

Q. X. Zhaoa ,
U. Södervall ,
M. Willandera ,
B. O. Fimland ,
D. Crawford ,
E. Selvigb ,
P. O. Holtzc ,
M. Karlsteena  and
E. Sveinbjömssond
Q. X. Zhaoa
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. ([email protected])
U. Södervall
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. ([email protected])
M. Willandera
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. ([email protected])
B. O. Fimland
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
D. Crawford
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
E. Selvigb
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
P. O. Holtzc
Affiliation:
Department of Physics, Linköping University of Technology, S-583 81 Linköping, Sweden
M. Karlsteena
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. ([email protected])
E. Sveinbjömssond
Affiliation:
Solid State Electronics Laboratory, Department of Microelectronics ED, Chalmers University of Technology, S-412 96 Göteborg, Sweden.
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Abstract

High quality Al0.3Ga0.7As/GaAs quantum wells with centrally doped Be-acceptors were grown by molecular beam epitaxy (MBE). The well width is either 10 nm or 20 nm, and the concentration of Be-acceptors is varied between 5× 1016/cm3 and 2×1018/cm3. The structures were treated systematically by dc H-plasma at different sample temperatures, gas pressures and cooling down procedures. The passivation of Be-acceptors were characterized by photoluminescence spectroscopy and secondary ion mass spectrometry (SIMS). Without causing degradation of the A1GaAs/GaAs interfaces, we have obtained, for the first time, a deactivation of above 80% of the Be-acceptors. The influence of the Be-doping on the bandgap excitons in the QW structures is also investigated in detail. A significant difference is found in comparison with the earlier reports for 150 Å wide quantum wells, in which different samples were used for different doping concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 253
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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