Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:34:52.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison

Published online by Cambridge University Press:  22 February 2011

Gary A. Pollock
Gary A. Pollock*
Affiliation:
ARCO Solar, Inc., P.O. Box 2105, Chatsworth, CA 91313
Get access

Abstract

The hydrogen content in thin film silicon:hydrogen alloy material has been measured by five techniques: 15N nuclear resonance reaction analysis, secondary ion mass spectrometry, infrared spectroscopy, nuclear elastic scattering spectroscopy, and Rutherford backscattering spectroscopy. NRA and SIMS data agree most closely in this study, although SIMS data from three of four laboratories are considerably scattered. The hydrogen content of TFS ranges from 18% at a deposition temperature of 150°C to 10% at 250°C. It varies little, if any, with thickness. Some advantages and disadvantages of the five techniques are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 379
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ziegler, J.F. et al, Nuc. Inst. and Meth., 149, 19–39 (1978).Google Scholar
2. Brodsky, M.H., Cardona, M. and Cuomo, J.J., Phys. Rev. B, 16, 3556–71 (1977).Google Scholar
3. Lanford, W., Solar Cells, 2, 351–63 (1980).Google Scholar
4. Clark, G.J. et al, App. Phys. Lett., 31, 582 (1977).Google Scholar
5. Fang, C.J., et al , Journal of Non-Crystal line Solids, 35 & 36, 255–260 (1980).CrossRefGoogle Scholar
6. Schwarz, R., Technical Digest of the International PVSEC-1, P-11–38, Kobe, Japan, Nov. 1984.Google Scholar
7. Kubota, K. et al, Nuc. Inst. and Meth., 168, 211–15 (1980).CrossRefGoogle Scholar
8. Hasegawa, S. and Imai, Y., Philos. Mag. B, 46, 239–51 (1982).CrossRefGoogle Scholar
9. Fallavier, M. et al, App. Phys. Lett., 39, 490–92 (1981).Google Scholar
10. Dellne, V.K., “Secondary Ion mass spectrometry: SIMS II,” In Proceedings of 2nd Int. Conf. on Secondary Ion Mass Spectrometry (SIMS 11), (Springer-Verlag, 1979), p. 48.Google Scholar
11. Ross, R.C., Tsong, I.S.T. and Messier, R., J. Vac. Scl. Technol., 20, 406–09 (1982).Google Scholar
12. Fukaka, Noboru et al, Jp. J. App. Phys., 21, L532–34 (1982).Google Scholar