Article contents
Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison
Published online by Cambridge University Press: 22 February 2011
Abstract
The hydrogen content in thin film silicon:hydrogen alloy material has been measured by five techniques: 15N nuclear resonance reaction analysis, secondary ion mass spectrometry, infrared spectroscopy, nuclear elastic scattering spectroscopy, and Rutherford backscattering spectroscopy. NRA and SIMS data agree most closely in this study, although SIMS data from three of four laboratories are considerably scattered. The hydrogen content of TFS ranges from 18% at a deposition temperature of 150°C to 10% at 250°C. It varies little, if any, with thickness. Some advantages and disadvantages of the five techniques are discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
REFERENCES
- 3
- Cited by