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Hydrogen Ion Beam Passivation of Electrically Active Defects in Crystalline Silicon Solar Cells

Published online by Cambridge University Press:  25 February 2011

Y.S. Tsuo ,
J.B. Milstein  and
R.J. Matson
Y.S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
J.B. Milstein
Affiliation:
Energy Materials Corporation, So. Lancaster, MA 01561
R.J. Matson
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

We have observed significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells after hydrogen ion beam passivation for a period of ten minutes or less. We have obtained electron-beam-induced current data that show the hydrogen passivation of dislocations as well as grain boundaries in edge-supportedpulling silicon sheet solar cells. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 211
Copyright
Copyright © Materials Research Society 1985

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References

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