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Hydrogen Induced Defects at Silicon Surfaces and Buried Epitaxial Misfit Dislocation Interfaces

Published online by Cambridge University Press:  25 February 2011

Tian-Qun Zhou ,
Zbigniew Radzimski ,
Zhigang Xiao ,
Bhushan Sopori  and
George A. Rozgonyi
Tian-Qun Zhou
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Zbigniew Radzimski
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Zhigang Xiao
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Bhushan Sopori
Affiliation:
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO 80401
George A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

A silicon epitaxial structure containing spatially confined arrays of misfit dislocations has been used in order to investigate the interaction between hydrogen and individual extended defects. Hydrogen was introduced using a Kaufman plasma ion beam source. A characteristic Si-H peak at 2100 cm-1 was obtained using multiple internal reflection infrared spectrophotometry. Microdefects such as gas bubbles and {111} planar defects were found near the surface, as well as at the misfit dislocation interfaces, using transmission electron microscopy. A heavily damaged region was obtained on the top Si surface and an extended area SEM/EBIC contrast was obtained due to a surface electrical field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 449
Copyright
Copyright © Materials Research Society 1990

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