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Hydrogen in Silicon

Published online by Cambridge University Press:  26 February 2011

J. W. Corbett ,
J. L. Lindström  and
S. J. Pearton
J. W. Corbett
Affiliation:
Physics Department, The University at Albany, Albany, NY 12222 USA
J. L. Lindström
Affiliation:
AT&T Bell Laboratories, Murray Hill, NY 07974 USA
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NY 07974 USA
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Abstract

We summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 229
Copyright
Copyright © Materials Research Society 1988

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Footnotes

**

Permanent Address: Försvarets Forskningsanstalt, Huvudavdelning 3, Box 1165, S- 581 11 Linköping, SWEDEN

References

REFERENCES

1.Lanford, W. A. (private communication).Google Scholar
2.Pearton, S. J., Corbett, J. W., and Shi, T. S., Appl. Phys. A 43, 153 (1987).Google Scholar
3.Van Wieringen, A. and Warmoltz, N., Physica 22, 849 (1956).Google Scholar
4.Singh, V. A., Weigel, C., Corbett, J. W., and Roth, L. M., Phys. Stat. Sol. 81b, 637 (1977).Google Scholar
5.Singh, V. A., Weigel, C., Corbett, J. W., and Roth, L. M., Phys. Lett. 65A, 261 (1978).Google Scholar
6.DeLeo, G. G., Fowler, W. B., and Watkins, G. D., Phys. Rev. B29, 1819 (1984).Google Scholar
7.Sah, C. T., Sun, J. Y. C., and Tzou, J. J. T., Appl. Phys. Lett. 43, 204 (1983).Google Scholar
8.Sah, C. T., Sun, J. Y. C., and Tzou, J. J. T., J. Appl. Phys. 54, 4378 (1983).Google Scholar
9.Sah, C. T., Sun, J. Y. C., Tzou, J. J. T., and Pan, S. C. S., Appl. Phys. Lett. 43, 962 (1983).Google Scholar
10.Pankove, J. I., Carlson, D. E., Berkeyheiser, J. E., and Wance, R. O., Phys. Rev. Lett. 51, 2224 (1983).Google Scholar
11.Pankove, J. I., Wance, R. O., and Berkeyheiser, J. E., Appl. Phys. Lett. 45, 1100 (1984).Google Scholar
12.Hansen, W. L., Pearton, S. J., and Haller, E. E., Appl. Phys. Lett. 44, 889 (1984).Google Scholar
13.Thewalt, M. L., Lightowlers, E. C., and Pankove, J. I., Appl. Phys. Lett. 46, 689 (1985).Google Scholar
14.Pankove, J. I., Zanzucchi, P. J., Magee, C. W., and Lucovsky, G., Appl. Phys. Lett. 46, 421 (1985).Google Scholar
15.Assali, L. V. C. and Leite, J. R., Phys. Rev. Lett. 55, 980 (1985).Google Scholar
16.Assali, L. V. C. and Leite, J. R., Phys. Rev. Lett. 56, 403 (1986).Google Scholar
17.DeLeo, G. G. and Fowler, W. B., J. Electron Mater. 14a 745 (1985).Google Scholar
18.DeLeo, G. G. and Fowler, W. B., Phys. Rev. B31, 6861 (1985).Google Scholar
19.DeLeo, G. G. and Fowler, W. B., Phys. Rev. Lett. 56 402 (1986).Google Scholar
20.Nielsen, B. Bech, Andersen, J. U., and Pearton, S. J., to be published.Google Scholar
21.Marwick, A. D., Oehrlein, G. S., and Johnson, N. M., to be published.Google Scholar
22.Johnson, N. M., Phys. Rev. B35, 5525 (1985).Google Scholar
23.Johnson, N. M., Herring, C., and Chadi, D. J., Phys. Rev. Lett. 56, 769 (1986).Google Scholar
24.Stavola, M., Pearton, S. J., Lopta, J., and Dautremont-Smith, W. C., Appl. Phys. Lett. 50, 1086 (1987).Google Scholar
25.Stavola, M., Pearton, S. J., Lopata, J., and Dautremont-Smith, W. C., to be published.Google Scholar
26.Bergman, K., Stavola, M., Pearton, S. J., and Lopata, J., to be published.Google Scholar
27.Deak, P., Snyder, L. C., and Corbett, J. W., to be published.Google Scholar
28.Deak, P., Snyder, L. C., and Corbett, J. W., to be published.Google Scholar
29.Bonapasta, A. A., Lapiccirella, A., Tomassini, N., and Capizzi, M., to be published.Google Scholar
30.Nielsen, B. B., to be published.Google Scholar
31.Deak, P., Snyder, L. C., Lindstrom, J. L., Corbett, J. W., Pearton, S. J., and Tavendale, A. J. to be published.Google Scholar
32.Corbett, J. W., Lindstrom, J. L., Pearton, S. J., and Tavendale, A. J., Solar Cells, to be published.Google Scholar
33.Szydlo, N., Marganino, J., and Kaplan, D., J. Appl. Phys. 53, 5044 (1982).Google Scholar
34.Widmer, A. E., Fehlman, R., Magee, C. W., J. Non-Cryst. Solids, 34, 199 (1983).Google Scholar
35.Ponce, F. A., Johnson, N. M., Tramontana, J. C., and Walker, J., in Microscopy of Semiconducting Materials, edited by Cullis, A. G. (Inst. Phys., Bristol, 1988) in press.Google Scholar
36.Feng, S. J. and Oehrlein, G. S., to be published.Google Scholar
37.Corbett, J. W., Corelli, J. C., Desnica, U., and Snyder, L. C., in Microscopic Identification of Electronic Defects in Semiconductors, edited by Johnson, N., Bishop, S., and Watkins, G. D. (Mater. Res. Soc. Proc. 46, Pittsburgh, PA 1985) pp. 243–255.Google Scholar
38.Stein, H. J., Phys. Res. Lett. 42, 1030 (1985).Google Scholar
39.Tavendale, A. J., Alexiev, D., and Williams, A. A., Appl. Phys. Lett. 47, 317 (1985).Google Scholar
40.Johnson, N. M., Appl. Phys. Lett. 47, 874 (1985).Google Scholar
41.Zundel, T., Courcelle, E., Mesh, A., Muller, J. C., and Siffert, P., Appl. Phys. A40, 67 (1986).Google Scholar
42.Cappizi, M. and Mittaga, A., Appl. Phys. Lett. 50, 918 (1987).Google Scholar
43.Ichimaya, T. and Furuichi, A., J. Appl. Rad. Isotopes, 19, 573 (1968).Google Scholar
44.Kazmerski, L. L., J. Vac. Sci. Tech. A3, 1287 (1985).Google Scholar
45.Pohryles, B., Phys. Stat. Sol. (a) 67, K75 (1981).Google Scholar
46.Pearton, S. J., Phys. Stat. Sol. (a) 72, K73 (1982).Google Scholar
47.Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Appl. Phys. Lett. 40, 882 (1982).Google Scholar
48.Osipyan, Yu. A., Soy. Phys. JETP 55, 294 (1982).Google Scholar
49.Pearton, S. J., J. Electron Mater. 14a, 737 (1985).Google Scholar
50.Mogro-Campero, A., Love, R. P. and Schubert, R., J. Electrochem. Soc. 132, 2006 (1985).Google Scholar
51.Dvurechenski, A. V., Ryantsev, I. A., and Smirnov, L. S., Sov. Phys. Semicond. 16, 400 (1982).Google Scholar
52.Hanoka, J., private communication.Google Scholar
53.Pearton, S. J., Tavendale, A. J., Williams, A. A. and Alexiev, D., Semiconductor Silicon ed. Huff, H. R. (Electrochem. Soc. Pennington, NJ 1986) p. 826.Google Scholar
54.Seager, C. H., Anderson, R. A. and Panitz, J. K. G., J. Mat. Res. 2 96 (1987).Google Scholar
55.Baranowski, J. M. and Tartarkiewicz, J., Phys. Rev. B 35 7450 (1987).Google Scholar
56.Grander, M. and Jacob, H., Appl. Phys. A39 3206 (1986).Google Scholar
57.Schnegg, A., Grunder, M. and Jacob, H., Semiconductor Silicon, ed. Huff, H. R., (Electrochem Soc. Pennington NJ 1986) p. 198.Google Scholar
58.Tavendale, A. J., Williams, A. A. and Pearton, S. J., Appl. Phys. Lett. 48 590 (1986).Google Scholar
59.Hellings, G. J. A., Straager, A. and Kipperman, A. H. M., J. Appl. Phys. 57, 2067 (1985).Google Scholar
60.Gale, R., Feigel, F. J., Magee, C. W. and Young, D. R., J. Appl. Phys. 54, 6438 (1983).Google Scholar
61.Meyer, W. G. and Fair, R. B., IEEE Trans Electron. Dev. ED30 96 (1983).Google Scholar
62.Oehrlein, G. S., Tromp, R. M., Lee, Y. H. and Petrillo, E. J., Appl. Phys. Lett. 45, 420 (1984).Google Scholar
63.Nicollian, E. H., Berglund, C. N., Schmidt, P. F. and Andrews, J. M., J. Appl. Phys. 42 5654 (1971).Google Scholar
64.Cohen, S. S., J. Appl. Phys. 59 2073 (1986).Google Scholar
65.Magee, C. W., Cohen, J. A., Voss, D. E. and Brice, D. K., Nucl. Instr. Meth. 168 383 (1980).Google Scholar
66.Jaworowski, A. E., Wielunski, L. S. and Listerman, T. W., Mat. Res. Soc. Symp. Proc. 46 561 (1986).Google Scholar
67.Mu, X. C., Fonash, S. J. and Singh, K., Appl. Phsy. Lett. 49 67 (1986).Google Scholar