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Hydrogen in a-Si:H Deposited by an Expanding Thermal Plasma: A Temperature, Growth Rate and Isotope Study

Published online by Cambridge University Press:  10 February 2011

W.M.M. Kessels ,
M.C.M. Van De Sanden ,
R.J. Severens ,
L.J. Van Ijzendoorn  and
D.C. Schram
W.M.M. Kessels
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. Van De Sanden
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
R.J. Severens
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
L.J. Van Ijzendoorn
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
D.C. Schram
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 529
Copyright
Copyright © Materials Research Society 1998

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References

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