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Hydrogen Distribution in High Stability A-Si:H Prepared by the Hot Wire Technique

Published online by Cambridge University Press:  10 February 2011

J. Todd Stephen ,
Daxing Han ,
A. Harv Mahan  and
Yue Wu
J. Todd Stephen
Affiliation:
Dept. of Phys. & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255
Daxing Han
Affiliation:
Dept. of Phys. & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255
A. Harv Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Yue Wu
Affiliation:
Dept. of Phys. & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255
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Abstract

In this work the microstructures of 2–3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by 1H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than that observed 25–35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90 percent of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 485
Copyright
Copyright © Materials Research Society 1996

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