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A Hvem Study of the Electron Irradiated Defects in Nitrogen Doped FZ-Si Single Crystal

Published online by Cambridge University Press:  25 February 2011

Gao Yuzun  and
T. Takeyama
Gao Yuzun
Affiliation:
General Research Institute for Non-Ferrous Metals, Beijing, 100088 China;
T. Takeyama
Affiliation:
HVEM Lab, Hokkaido University, Sapporo, Hokkaido, Japan
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Abstract

High voltage transmission electron microscope (JEM-1000) has been used to investigate the electron irradiated defects in in p-type FZ-Si and nitrogen doped p-type FZ-Si. It was found that when the irradiated conditions were the saie ,the irradiated defects were easier to be produced in the FZ-Si than in nitrogen doped FZ-Si in the temperature range 573-773 K. The defect density was higher in the foraer. The migration energy of the vacancies in the temperature range 573-773 K was 0.34 and 0.58 eV for FZ-Si and nitrogen doped FZ-Si respectively. It seems to indicate that there was some interaction between vacancies and nitrogen atoms in the nitrogen doped FZ-Si. The results proved that the nitrogen doped FZ-Si has excellent property against electron irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 937
Copyright
Copyright © Materials Research Society 1990

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References

1 Sumino, K., et al. , J.Appl.Phys. 54 (1983), 5016 Google Scholar
2 Tajima, M., et al. , Jpn.Appl. 20(1981),L423 Google Scholar