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Hrem and CBED Studies of Polarity of Nitride Layers with Prismatic Defects Grown Over SiC
Published online by Cambridge University Press: 10 February 2011
Abstract
The polarity of GaN films and their AlN buffer layer grown on (0001)si 6H-SiC by an electron cyclotron resonance plasma enhanced molecular beam epitaxy has been investigated by convergent beam electron diffraction (CBED) and high resolution electron microscopy (HREM). The experimental results are in good agreement with the simulations and allow to determine that the free surfaces of the GaN and AlN layers are Ga and Al-terminated respectively. Moreover, (1210) prismatic planar defects observed in the AlN layers have been identified as stacking faults and observations in different areas of the specimens have shown that the layers are unipolar.
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- Copyright © Materials Research Society 1997
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