Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T11:04:56.587Z Has data issue: false hasContentIssue false
  • English
  • Français

HR XRD and Emission of InxGa1-xAs/GaAs quantum wells with embedded InAs quantum dots at the variation of InxGa1-xAs composition

Published online by Cambridge University Press:  19 November 2013

Leonardo G. Vega Macotela ,
Ricardo Cisneros Tamayo  and
Georgiy Polupan
Leonardo G. Vega Macotela
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Ricardo Cisneros Tamayo
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Georgiy Polupan
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Get access

Abstract

The high resolution X ray diffraction (HR-XRD) diagrams have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. These technological changes have been accompanied by the variation non-monotonously of InAs QD emission. Numerical simulation of HR-XRD results has shown that the level of elastic strains and the composition of quantum layers vary none monotonously in studied QD structures. Simultaneously it was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the mentioned optical and structural effects in studied structures have been discussed.

Keywords

luminescenceInAs quantum dotsXRD
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Takahasi, M., Kaizu, T., Journal of Crystal Growth 311, 1761–1763 (2009)CrossRefGoogle Scholar
Bimberg, D., Grundman, M., Ledentsov, N. N., Quantum Dot Heterostructures, Ed. Wiley & Sons (2001) 328.Google Scholar
Amtout, , Raghavan, S., Rotella, P., von Winckel, G., Stinz, A. and Krishna, S., J. Appl. Phys. 96, 3782 (2004)CrossRefGoogle Scholar
Torchinskaya, T. V., Opto-electronics Review, 6(2), 121–130 (1998).Google Scholar
Haft, D., Warburton, R.J., Karrai, K., Huant, S., Medeiros-Ribeiro, G., Garsia, J., Schoenfeld, W. and Petroff, P.M., Appl. Phys. Lett. 78, 2946 (2001)CrossRefGoogle Scholar
Stintz, , Liu, G.T., Gray, L., Spillers, R., Delgado, S.M. and Malloy, K.J., J. Vac. Sci. Technol. B 18(3), 1496 (2000)CrossRefGoogle Scholar
Torchynska, T.V., J. Appl. Phys. 104(7), 074315 (2008)CrossRefGoogle Scholar
Torchynska, T.V., Casas Espinola, J.L., Borkovska, L., Ostapenko, S., Dybiec, M., Polupan, O., Korsunska, N., Stintz, A., Eliseev, P.G. and Malloy, K.J., J. Appl. Phys. 101(2), art.no. 024323 (2007)CrossRefGoogle Scholar
BenNaceur, H., Moussa, I., Tottereau, O., Rebey, A., El Jani, B., Physica E 41, 1779–1783 (2009)Google Scholar
Torchynska, T.V., Ostapenko, S., Dybiec, M., Phys. Rev. B 72, 195341 (2005)Google Scholar
Dybiec, M., Ostapenko, S., Torchynska, T. V. and Velasquez Losada, E., Appl. Phys. Lett. 84(25), 5165–5167 (2004)CrossRefGoogle Scholar
Shu, G.W., Wang, J.S., Shen, J.L., Hsiao, R.S., Chen, J.F., Lin, T.Y., Wu, C.H., Huang, Y.H., Yang, T.N., Mater. Scien. and Engin. B, 166, 46–49 (2010)CrossRefGoogle Scholar
Dybiec, M., Borkovska, L., Ostapenko, S., Torchynska, T.V., Casas Espinola, J.L., Stinz, A., Malloy, K.J., Appl. Surf. Scien. 252(15) 5542–5545 (2006).CrossRefGoogle Scholar
Torchynska, T.V., Diaz Cano, A., Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B, Condensed Matter, 376-377(1), 367–369 (2006).CrossRefGoogle Scholar
Li, H., Mei, T., Zhang, W. D.H., Yoon, S.F. and Yuan, H.. J. Appl. Phys. 98, 054905 (2005).Google Scholar
Mukhopadhyay, P., Das, P, Pathak, S, Chang, E. Y., Biswas, D.. CS MANTECH Conference, Palm Springs, California, USA (2011)Google Scholar
Polupan, G., Vega-Macotela, L.G., Sanchez Silva, F., Luminescence, J., 132, 1270–1273 (2012).Google Scholar
Torchynska, T.V., Palacios Gomez, J., Polupan, G.P., Becerril Espinoza, F.G., Garcia Borquez, A., Korsunskaya, N.E., Khomenkova, L.Yu., Appl. Surf. Science, v.167, 197–204 (2000).CrossRefGoogle Scholar
Torchynska, T.V., Stintz, A., J. Appl. Phys. 108, 2, 024316 (2010).Google Scholar