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Homoepitaxial growth on 4H-SiC Substrates by Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Christer Hallin ,
Igor Khlebnikov ,
Yuri Khlebnikov ,
Peter Muzykov ,
Elif Berkman ,
Monica Sharma ,
George Stratiy ,
Murat Silan ,
Cem Basceri  and
Cengiz Balkas
Christer Hallin
Affiliation:
[email protected], Intrinsic Semiconductor, Epitaxy, 22660 Executive Drive #101, Dulles, Virginia, 20166, United States
Igor Khlebnikov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Yuri Khlebnikov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Peter Muzykov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Elif Berkman
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Monica Sharma
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
George Stratiy
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Murat Silan
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Cem Basceri
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Cengiz Balkas
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
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Abstract

Low dislocation density and even micropipe free substrates open up a great opportunity to produce high quality epitaxial layers. The epi-layer will become more sensitive to the epitaxial process itself and less dependent on varying substrate quality. Results presented here indicate a strong dependence of the epitaxial layers' growth mode and surface roughness on the substrates' dislocations and domain structure. Thick epitaxial layers grown on near on-axis wafers, both C-face and Si-face, show very similar growth behaviors as for physical vapor transport (PVT) grown crystals. The mix between step-flow and dislocation driven growth on near on-axis C-face chemical vapor deposition (CVD) grown epi-layers (30 μm thick) is resulting in a as smooth, and measured surface roughness is as low, as for growth on 8o off-axis substrates.

Surface roughness, Ra, measured on a 50 μm thick epitaxial layer, grown on a low EPD (1E+4 cm-2) 8o off-axis micropipe free substrate, was as low as 1.0 nm (2.98x2.32 mm area).

Keywords

chemical vapor deposition (CVD) (deposition)epitaxydislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-05
Copyright
Copyright © Materials Research Society 2006

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