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Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

Published online by Cambridge University Press:  10 February 2011

E. Chen ,
S. Zhang ,
A. Michel ,
R. F. Davis  and
H. H. Lamb
E. Chen
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
S. Zhang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
A. Michel
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
H. H. Lamb
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
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Abstract

Homoepitaxial growth of GaN on MOCVD-grown GaN/AlN/6H-SiC substrates was investigated using NH3-seeded supersonic molecular beams and an effusive Ga source. Ga-limited growth is observed at 730 and 770°C for incident Ga fluxes ≤ 1.2×1015 cm−2 s−1 using a 0.25 eV NH3 beam. A Ga incorporation efficiency of 20–25% is observed under these conditions. Increasing NH3 kinetic energy in the 0.25 to 0.61 eV range results in a modest increase in the GaN growth rate which we ascribe to an enhancement in NH3 reactivity. A concomitant increase in surface roughness is observed with increasing GaN growth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 331
Copyright
Copyright © Materials Research Society 1998

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