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Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Published online by Cambridge University Press:  15 March 2011

H. Tsuchida ,
I. Kamata ,
S. Izumi ,
T. Tawara ,
T. Jikimoto ,
T. Miyanagi ,
T. Nakamura  and
K. Izumi
H. Tsuchida
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
I. Kamata
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
S. Izumi
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Tawara
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Jikimoto
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Miyanagi
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Nakamura
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
K. Izumi
Affiliation:
Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
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Abstract

Growth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J2.1
Copyright
Copyright © Materials Research Society 2004

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