Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T10:40:51.313Z Has data issue: false hasContentIssue false
  • English
  • Français

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

Published online by Cambridge University Press:  11 February 2011

Mitsuo Okamoto ,
Ryoji Kosugi ,
Shinichi Nakashima ,
Kenji Fukuda  and
Kazuo Arai
Mitsuo Okamoto
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Ryoji Kosugi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Shinichi Nakashima
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan R&D Association for Future Electron Devices, Advanced Power Device laboratory, Tokyo, Japan
Kenji Fukuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Kazuo Arai
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Get access

Abstract

Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K5.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFFERENCES

[1] Cooper, J. A., Ryu, S-H., Li, Y., Matin, M., Spitz, J., Morisette, D. T., Mcglothlin, H. M., Das, M. K., Melloch, M. R., Capano, M. A. and Woodall, J. M., Mat. Res. Soc. Symp. Proc. 572, 3 (1999).Google Scholar
[2] Matsunami, H., Mat. Sci. Forum 338–342, 125 (2000).Google Scholar
[3] Di Cioccio, L., Le Tiec, Y., Jaussaud, C., Hugonnard-Bruyère, E. and Bruel, M., Mater. Sci. Forum 264–268, 765 (1998).Google Scholar
[4] Sasaki, K., Thin Solid Films 395, 225 (2001).Google Scholar
[5] Takeuchi, D., Watanabe, H., Yamanaka, S., Okushi, H. and Kajimura, K., Diamond Relat. Mater. 9, 231(2000).Google Scholar
[6] Kim, H. S., Park, Y. J., Choi, I. H. and Baik, Y-. J., Thin Solid Films 341, 42 (1999).Google Scholar
[7] Mandracci, P., Ferrero, S., Cicero, G., Giorgis, F., Pirri, C. F., Barucca, G., Reitano, R., Musumeci, P., Calcagno, L. and Foti, G., Thin Solid Films 383, 169 (2001).Google Scholar
[8] Matsutani, T., Kiuchi, M., Takeuchi, T., Matsumoto, T., Mimoto, K. and Goto, S., Vacuum 59, 152 (2000).Google Scholar
[9] Okamoto, M., Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., Fukuda, K., Okushi, H. and Arai, K., Mater. Sci. Forum 389–393, 299 (2002)Google Scholar
[10] Fukuda, Kenji, Senzaki, Junji, Kojima, Kazutoshi and Suzuki, Takaya, presented at European Conference on Silicon Carbide and Related Materials 2002, Linkoping, Sweden, 2002 (to be published)Google Scholar
[11] Zhang, J., Ellison, A. and Janzén, E., Mater. Sci. Forum 338–342, 137 (2000)Google Scholar