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Holographic Photoetching of High-Quality Diffraction Gratings in P-GaAs for Distributed Feedback Lasers

Published online by Cambridge University Press:  28 February 2011

Richard Matz
Richard Matz*
Affiliation:
Research Laboratories of Siemens AG, Otto-Hahn-Ring 6, D-8000 MUnchen 83, Federal Republic of Germany
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Abstract

Quarter micrometer period diffraction gratings having depth-to-spacing ratios around 0.5 have been photochemically etched in p-GaAs using direct holographic illumination with 257 nm UV light. The results suggest the interaction of the incident light with the etched grating. The etch process is represented with the aid of a potential-pH diagram calculated from literature data.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 657
Copyright
Copyright © Materials Research Society 1987

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