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High-Temperature Reliability of GaN Electronic Devices

Published online by Cambridge University Press:  03 September 2012

Seikoh Yoshida  and
Joe Suzuki
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan, [email protected]
Joe Suzuki
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
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Abstract

High-quality GaN was grown using gas-source molecular-beam epitaxy (GSMBE). The mobility of undoped GaN was 350 cm2/Vsec and the carrier concentration was 6×1016 cm−3 at room temperature. A GaN metal semiconductor field-effect transistor (MESFET) and an n-p-n GaN bipolar junction transistor (BJT) were fabricated for hightemperature operation. The high-temperature reliability of the GaN MESFET was also investigated. That is, the lifetime of the FET at 673 K was examined by continuous current injection at 673 K. We confirmed that the FET performance did not change at 673 K for over 1010 h. The aging performance of the BJT at 573 K was examined during continuous current injection at 573 K for over 850 h. The BJT performance did not change at 573 K. The current gain was about 10. No degradation of the metalsemiconductor interface was observed by secondary ion-mass spectrometry (SIMS) and transmission electron microscopy (TEM). It was also confirmed by using Si-ion implantation that the contact resistivity of the GaN surface and electrode materials could be lowered to 7×10-6 ohmcm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W4.8
Copyright
Copyright © Materials Research Society 1999

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