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High-speed high-quality epitaxial growth of N and B codoped 6H-SiC by closed sublimation method

Published online by Cambridge University Press:  01 February 2011

Tomohiko Maeda ,
Yoshihiro Nakamura ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano ,
Isamu Akasaki ,
Tomoaki Furusho ,
Hiroyuki Kinoshita  and
Masahiro Yoshimoto
Tomohiko Maeda
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, N/A, 468-8502, Japan, +81-52-832-1151, +81-52-832-1298
Yoshihiro Nakamura
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, Japan
Motoaki Iwaya
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, Japan
Satoshi Kamiyama
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, Japan
Hiroshi Amano
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, Japan
Isamu Akasaki
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, Japan
Tomoaki Furusho
Affiliation:
[email protected], SiXON Ltd., Japan
Hiroyuki Kinoshita
Affiliation:
[email protected], SiXON Ltd., Japan
Masahiro Yoshimoto
Affiliation:
[email protected], Kyoto Institute of Technology, Japan
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Abstract

N and B codoped 6H-SiC epilayers were grown by the closed sublimation method, the growth rate of which was as high as 100 mm/h. Donor acceptor (DA) pair emission at different temperatures was investigated for two samples with different B concentrations. The integrated photon count obtained from the photoluminescence (PL) spectra of the sample having high B concentration increases with temperature. To estimate the internal quantum efficiency, we measured the PL integrated photon counts of GaN at 10 K as a reference. The integrated PL photon count of 6H-SiC DA-doped epilayer at 250 K is almost comparable to that of GaN at 10 K, which is thought to be almost 100% because of the freezing of the nonradiative recombination at low temperature. This result implies that the internal quantum efficiency of the 6H-SiC DA-doped epilayer exceeds 95%.

Keywords

crystal growthoptical propertiesdopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE12-12
Copyright
Copyright © Materials Research Society 2006

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References

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