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High-Rate Growth of Stable a-Si:H

Published online by Cambridge University Press:  15 February 2011

T. Takagi ,
R. Hayashi ,
A. Payne ,
W. Futako ,
T. Nishimoto ,
M. Takai ,
M. Kondo  and
A. Matsuda
T. Takagi
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN, [email protected]
R. Hayashi
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
A. Payne
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
W. Futako
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
T. Nishimoto
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
M. Takai
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
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Abstract

Correlation between the gas phase species in silane plasma measured by mass spectrometry and the properties of hydrogenated amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapour deposition (PECVD) has been investigated. We have especially been interested in the higher-order silane related species in the plasma, whose contribution to the film growth is considered to be the cause of light-induced degradation in the film quality, especially at high growth rate. In this study, we varied excitation frequency, gas pressure and power density to vary the growth rates of a-Si:H films ranging from 2 Å/s to 20 Å/s.

Molecular density ratio of trisilane, representative of higher silane related radicals, to monosilane has shown a clear correspondence to the fill factor after light soaking of Schottky cells fabricated on the resulting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 105
Copyright
Copyright © Materials Research Society 1999

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