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High-Rate Deposition of Thin Films by High-Intensity Pulsed Ion Beam Evaporation

Published online by Cambridge University Press:  21 February 2011

A.N. Zakoutayev ,
G.E. Remnev ,
Yu.F. Ivanov ,
M.S. Arteyev ,
V.M. Matvienko  and
A.V. Potyomkin
A.N. Zakoutayev
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
G.E. Remnev
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
Yu.F. Ivanov
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
M.S. Arteyev
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
V.M. Matvienko
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
A.V. Potyomkin
Affiliation:
Nuclear Physics institute, Tomsk Polytechnic University, Tomsk 634050, Russia
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Abstract

A high-intensity ion beam (500 keV, current density 60 - 200 a/cm2, power density (0.25 - 1) • 108 W/cm2, pulse duration 60 ns, pulse repetition rate 4-6 mur-1) was used to deposit thin metal and carbon films by evaporation of respective targets. the instantaneous deposition rate was 0.6 - 5 mm/s. the films were examined using transmission electron microscopy and transmission electron diffraction. the metal films had a poly-crystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. the carbon films contained 25 - 125 nm diamonds. the ablation plasma was studied employing methods of pulsed spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 317
Copyright
Copyright © Materials Research Society 1995

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