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High-Quality III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

R.D. Dupuis ,
A.L. Holmes ,
P.A Grudowski ,
K.G. Fertitta  and
F.A. Ponce
R.D. Dupuis
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712-1100
A.L. Holmes
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712-1100
P.A Grudowski
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712-1100
K.G. Fertitta
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
F.A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
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Abstract

We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘ∼37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 183
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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5 Metalorganics purchased from Air Products and Chemicals, Allentown, PA, USA and Epichem Ltd., Merseyside, UK.Google Scholar
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7 This unintentionally doped GaN/sapphire film was grown using MOCVD by other workers and exhibited a more "normal" X-ray rocking curve FWHM ∼300–400 arc-s.Google Scholar
8 Dupuis, R.D. and Ponce, F.A., unpublished.Google Scholar