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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

Published online by Cambridge University Press:  03 September 2012

M. J. Jurkovic ,
L.K. Li ,
B. Turk ,
W. I. Wang ,
S. Syed ,
D. Simonian  and
H. L. Stormer
M. J. Jurkovic
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY, 10027
L.K. Li
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY, 10027
B. Turk
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY, 10027
W. I. Wang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY, 10027
S. Syed
Affiliation:
Department of Physics, Columbia University, New York, NY, 10027
D. Simonian
Affiliation:
Department of Physics, Columbia University, New York, NY, 10027
H. L. Stormer
Affiliation:
Department of Physics, Columbia University, New York, NY, 10027
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Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W8.1
Copyright
Copyright © Materials Research Society 1999

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