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High-Performance Structure of Light-Emitting Diode for GaAs on Si Tetsuroh Minemura

Published online by Cambridge University Press:  26 February 2011

Junko Asano  and
Yoshiaki Yazawa
Junko Asano
Affiliation:
Hitachi, Ltd., Hitachi Research Laboratory, 4026 Kuj i-cho, Hitachi-shi, I barak i 319–12, Japan
Yoshiaki Yazawa
Affiliation:
Hitachi, Ltd., Hitachi Research Laboratory, 4026 Kuj i-cho, Hitachi-shi, I barak i 319–12, Japan
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Abstract

The Light-emitting diode (LED) structures have been investigated to realize high-performance LEDs on Si substrates. The light intensity of the LEDs with p-GaAs / n-GaAs / Si structures, which was effected from thickness of the p-GaAs layer, was only about 55% of the homoepitaxialLED. The light intensity of the LED with an n-GaAs/p-GaAs/Si structure, however, was about four times stronger than those of p-GaAs/n-GaAs/Si structures. After continuous operation for two hours, the intensity still kept much stronger than those of the LEDs with p-GaAs / n-GaAs / Si structures, although it decreased to 15% of the homoepitaxial LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 511
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] See for example, Shichijo, H., Kao, Y. C., Kim, T. S., Taddiken, A. H. and Matyi, R. J., Proceedings of The 16th International Symposium on Gallium Arsenide and Related Compounds, edited by Ikoma, T. and Watanabe, H. (Inst. of Phys., Bristol, New York, 1990), p. 901.Google Scholar
[2] Sakai, S., Soga, T., Takeyasu, M. and Umeno, M, Japanese J. Appl. Phys. 24 L666 (1985).Google Scholar
[3] Deppe, D. G., Nam, D. W., Holonyak, N. Jr, Hsieh, K. C., Matyi, R. J., Shichijo, H., Epier, J. E. and Chung, H. F., Appl. Phys. Lett. 51, 1271 (1987)CrossRefGoogle Scholar
[4] Choi, H. K., Wang, C. A. and Fan, J. C. C., J. Appl. Phys. 68, 1916 (1990).Google Scholar
[5] Shinoda, Y., Nishioka, T. and Ohmachi, Y., Japanese J. Appl. Phys. 22, L450 (1983).Google Scholar
[6] Fletcher, R. M., Wagner, D. K., and Ballantyne, L. M., Appl. Phys. Lett. 44, 967 (1984).Google Scholar
[7] Sakai, K., Chang, S. S. and Ramaswamy, R., Appl. Phys. Lett. 53, 1201 (1988).Google Scholar
[8] Yazawa, Y., Minemura, T. and Unno, T., J. Appl. Phys. 69, 273 (1991).Google Scholar
[9] See for example, Sze, S. M., Physics of Semiconductors Devices 2nd ed., (John Willy & Sons, New York, 1981), p. 689.Google Scholar
[10] Lee, J. W., Shichijo, H., Tsai, H. L. and Matyi, R. J., Appl. Phys. Lett. 50, 31 (1987).CrossRefGoogle Scholar
[11] Soga, T., Hattori, S., Sakai, S., Takeyasu, M. and Umeno, M., J. Appl. Phys. 57, 4578 (1985).Google Scholar