CMP slurry with inorganic/resin abrasive was investigated for the Al/low k damascene wiring. [1] The slurry showed less scratching, higher polishing rate and better planarity. These advantages are attributable to the elasticity of the resin. The soft resin particle behaves as a cushion and prevents the scratching caused by agglomerated inorganic particles and foreign material. The springy feature of the resin particle increases the selectivity of removal rate at convex portions and concave portions. Furthermore, the pressure is loaded to the Al film surface effectively through the resin particle and higher CMP rate can be achieved even without chemicals such as oxidizers and acids. [2] This chemical free polishing would be the advantageous for preventing the corrosion of Al.