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High-Mobility Ga-Polarity GaN achieved by NH3-MBE

Published online by Cambridge University Press:  11 February 2011

J. X. Wang ,
X. L. Wang ,
D. Z. Sun ,
J. M. Li ,
Y. P. Zeng ,
G. X. Hu ,
H. X. Liu  and
L. Y. Lin
J. X. Wang
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
X. L. Wang
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
D. Z. Sun
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
J. M. Li
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
Y. P. Zeng
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
G. X. Hu
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
H. X. Liu
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
L. Y. Lin
Affiliation:
Materials Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
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Abstract

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm2/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.8
Copyright
Copyright © Materials Research Society 2003

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References

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