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Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

Published online by Cambridge University Press:  25 February 2011

Hiroyuki Matsunami
Hiroyuki Matsunami*
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

Single crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

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References

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