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High-Energy Elevated Temperature Si and Room Temperature B Implants in InP

Published online by Cambridge University Press:  26 February 2011

R. K. Nadella ,
J. Vellanki  and
M. V. Rao
R. K. Nadella
Affiliation:
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030.
J. Vellanki
Affiliation:
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030.
M. V. Rao
Affiliation:
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030.
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Abstract

High-energy (3 MeV) Si implantations were performed in InP:Fe at an elevated temperature of 200 °C for fluences 8×1014, 2×1015, and 5×1015 cm“2. For the 8×1014 cm−2 fluence, an activation of 82 %, carrier mobility of 1200 cm2/V-s, a peak carrier concentration of 9×1018 cm−3, and lattice quality comparable to that of virgin crystal were obtained. No amorphization takes place for any of the fluences used. Boron compensation implantations were performed in InP:Sn (n sime 2×1018 cm3) at room temperature in the energy range 1 to 5 MeV and fluence range 1011 to 1015 cm−2. After heat treatment, maximum resistivity of the order of 106 Ω-cm was obtained in B implanted InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 829
Copyright
Copyright © Materials Research Society 1992

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References

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