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High-Bandgap a-SI:H Deposited by Concentric-Electrode rf Glow Discharge

Published online by Cambridge University Press:  21 February 2011

J.P. Conde ,
F. Lau ,
V. Chu ,
K. K. Chan ,
J.M. Blum  and
M. Arienzo
J.P. Conde
Affiliation:
Instituto Superior Técnico, Department of Physics, 1096 Lisboa Codex, Portugal
F. Lau
Affiliation:
Instituto Superior Técnico, Department of Physics, 1096 Lisboa Codex, Portugal
V. Chu
Affiliation:
INESC, Rua Alves Redol 9, 1000 Lisboa, Portugal
K. K. Chan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
J.M. Blum
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
M. Arienzo
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
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Abstract

Hydrogenated amorphous silicon (a-Si:H) with Tauc's optical bandgap (Eopt) between 1.7 and 2.1 eV was deposited at room-temperature by concentric-electrode plasma-enhanced chemical vapor deposition (CE-PECVD). The variation of Eopt was achieved by varying the flow of silane, without hydrogen dilution. The increase in Eopt results from an increase in the hydrogen concentration in the film from 7 to 15%. The photoconductivity shows a monotonie decrease with increasing Eopt and is 10'-7 Scnr-1 for the 2.1 eV sample. The Urbach energy (Eu) is observed to increase sharply with increasing Eopt, while the subgap defect (Ns) density remains approximately constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 63
Copyright
Copyright © Materials Research Society 1992

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References

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